Category

Other Products

Manufacturer

Diodes Incorporated

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

500mA, 360mA

Rds On (Max) @ Id, Vgs

1.7Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 25V, 25pF @ 25V

Power - Max

450mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-563

Package / Case

SOT-563, SOT-666