Category

Other Products

Manufacturer

NXP Semiconductors

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.1 nC @ 4.5 V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

43 pF @ 10 V

Power Dissipation (Max)

360mW (Ta), 2.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-883

Package / Case

SC-101, SOT-883