Category

Other Products

Manufacturer

Toshiba Electronic Devices and Storage Corporation

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900 V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.1Ohm @ 2.3A, 10V

Vgs(th) (Max) @ Id

4V @ 450µA

Gate Charge (Qg) (Max) @ Vgs

20 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

950 pF @ 25 V

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack