Category

Other Products

Manufacturer

Toshiba Electronic Devices and Storage Corporation

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 30A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

182 nC @ 5 V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

10900 pF @ 10 V

Power Dissipation (Max)

78W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN