Category

Other Products

Manufacturer

onsemi

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200 V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

550mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

21 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

950 pF @ 20 V

Power Dissipation (Max)

1W (Ta), 20W (Tc)

Operating Temperature

150°C

Mounting Type

Through Hole

Supplier Device Package

TP

Package / Case

TO-251-3 Short Leads, IPAK, TO-251AA