Category

Other Products

Manufacturer

onsemi

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

180mOhm @ 800mA, 10V

Gate Charge (Qg) (Max) @ Vgs

2 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

88 pF @ 10 V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

600mW (Ta)

Operating Temperature

-55°C ~ 125°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-SCH

Package / Case

6-SMD, Flat Leads