Category

Other Products

Manufacturer

Alpha and Omega Semiconductor, Inc.

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual) Asymmetrical

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

19A, 31A

Rds On (Max) @ Id, Vgs

5.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

820pF @ 15V

Power - Max

3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6)

Package / Case

8-PowerWDFN